copyright@winsemi microelectronics co., ltd., all right reserved. WFSA5510 rev.a feb.2012 n- channel and p-channel silicon mosfets features low on resistance. composite type with an n-channel mosfet and a p-channel mosfet driving from a 4.5v/-4.5v supply voltage contai ned in a single package. high-density mounting. zener-protected rohs compliant. applications ultrahigh speed switching, motor driver applications absolute maximum ratings at ta=250c parameter symbol conditions ratings unit n-ch p-ch drain-to-source voltage v dss drain-source voltage 100 -100 v gate-to-source voltage v gss gate-source voltage + 20 + 20 v drain current (dc) i d continuous drain current 2 -2 a drain current (pulse) i dp pw 10us, duty cycle 1% 8 -8 a allowable power dissipation p d mounted on a ceramic board (1000mm 2 0.8mm) 1unit 1.3 w total dissipation p t mounted on a ceramic board (1000mm 2 0.8mm) 1.7 w channel temperature t ch maximum junction temperature 150 0 c storage temperature t stg storage temperature range -55~+150 0 c sop-8
steady, keep you advance WFSA5510 2 /10 n-channel electrical characteristics at ta=250c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =250ua, v gs =0v 100 - - v zero-gate voltage drain current i dss v ds =80v, v gs =0v - - 1 ua gate-to-source leakage current i gss v gs =+ 16v, v ds =0v - - + 10 na gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.2 1.8 2.6 v static drain-to-source on-state resistance r ds(on) i d =2a, v gs =10v - 175 220 m ? r ds(on) i d =1.5a, v gs =4v - 220 310 m ? input capacitance c iss v ds =30v, v gs =0v, f=1mhz - 470 - pf output capacitance c oss -40 - reverse transfer capacitance c rss -25 - turn-on delay time t d(on) v gen =10v, v ds =30v, r l =30 ? ,i d =1a, r gen =6 ? -612 ns rise time t r -815 turn-off delay time t d(off) -2546 fall time t f -2037 total gate charge q g n-channel v ds =50v, v gs =10v, i d =2a -1217 nc gate-to-source charge q gs -1.8 - gate-to-drain ?miller? charge q gd -1 - diode forward voltage v sd i s =2.5a, v gs =0v - 0.75 1.3 v
steady, keep you advance WFSA5510 3 /10 n-channel typical characteristics at t a =25 0 c
steady, keep you advance WFSA5510 4 /10
steady, keep you advance WFSA5510 5 /10 p-channel electrical characteristics at t a =25 0 c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =-250ua, v gs =0v -100 - - v zero-gate voltage drain current i dss v ds =-80v, v gs =0v - - -1 ua gate-to-source leakage current i gss v gs =+ 16v, v ds =0v - - + 10 na gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -1.2 -1.8 -2.6 v static drain-to-source on-state resistance r ds(on) i d =-2a, v gs =-10v - 176 225 m ? r ds(on) i d =-1.5a, v gs =-4v - 225 315 m ? input capacitance c iss v ds =-30v, v gs =0v, f=1mhz - 1050 - pf output capacitance c oss -70 - reverse transfer capacitance c rss -40 - turn-on delay time t d(on) v gen =-10v, v ds =-30v, r l =30 ? ,i d =1a, r gen =6 ? -917 ns rise time t r -1019 turn-off delay time t d(off) - 81 147 fall time t f - 82 149 total gate charge q g v ds =-50v, v gs =-10v, i d =-2a - 21.3 30 nc gate-to-source charge q gs -3.2 - gate-to-drain ?miller? charge q gd -4.5 - diode forward voltage v sd i s =-2.5a, v gs =0v - -0.75 -1.3 v
steady, keep you advance WFSA5510 6 /10 p-channel typical characteristics at t a =25 0 c
steady, keep you advance WFSA5510 7 /10
steady, keep you advance WFSA5510 8 /10 switching time test circuit
steady, keep you advance WFSA5510 9 /10 sop8 package dimension unit:mm
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